Investigation of Electrical and Optical Characterisation of HBTs for Optical Detection

UoM administered thesis: Phd

  • Authors:
  • Yongjian Zhang

Abstract

In this thesis, a detailed study of the electrical and optical characterisations of Heterojuction Bipolar Transistors (HBTs) for optical detection is presented. By comparing both DC and optical characterisations between In0.49Ga0.51P/GaAs Single Heterojuction Bipolar Transistors (SHBTs) and Double Heterojuction Bipolar Transistors (DHBTs), the advantages of using the DHBT as a short wavelength detector are shown. Phenomena related to the base region energy band bending in the DHBT caused by a self-induced effective electric field is discussed and its effects on the performance of the device are elaborated.The use of an eye diagram has been employed to provide requisite information for performance qualification of SHBT/DHBT devices. These give a more detailed understanding compared to conventional S-parameters method. A detailed comparison of In0.49Ga0.51P/GaAs SHBT and DHBT performance using an eye diagram as a functional tool by adopting a modified T-shaped small signal equivalent circuit are given. By adopting this modified T-shaped small signal equivalent circuit, the use of In0.49Ga0.51P/GaAs Double Heterojuction Phototransistors (DHPT) as a short wavelength photodetector is analysed. It is therefore shown that an eye diagram can act as a powerful tool in HBTs/HPTs design optimisations, for the first time in this work.In order to predict the spectral response (SR) and optical characterisations of GaAs-based HPTs, a detailed theoretical absorption model is also presented. The layer dependence of an optical flux absorption profile, along with doping dependent absorption coefficients are taken into account for the optical characterisation prediction. With the aim of eliminating the limitation of current gain as a prerequisite, analytical modelling of SR has been developed by resolving the continuity equation and applying realistic boundary conditions. Then, related physical parameters and a layer structure profile are used to implement simulations. A good agreement with the measured results of the Al0.3Ga0.7As/GaAs HPT is shown validating the proposed theoretical model.

Details

Original languageEnglish
Awarding Institution
Supervisors/Advisors
  • Ali Rezazadeh (Supervisor)
Award date1 Aug 2016