Ultra-Low Swing CMOS Transceiver for 2.5-D Integrated SystemsCitation formats
Standard
Ultra-Low Swing CMOS Transceiver for 2.5-D Integrated Systems. / Mroszczyk, Przemyslaw; Pavlidis, Vasileios.
2018 19th International Symposium on Quality Electronic Design, ISQED 2018. 2018. p. 262-267 (Proceedings - International Symposium on Quality Electronic Design, ISQED; Vol. 2018-March).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review
Harvard
APA
Vancouver
Author
Bibtex
}
RIS
TY - GEN
T1 - Ultra-Low Swing CMOS Transceiver for 2.5-D Integrated Systems
AU - Mroszczyk, Przemyslaw
AU - Pavlidis, Vasileios
PY - 2018
Y1 - 2018
N2 - This paper presents the design of a low swing transceiver for chip-to-chip communication in 2.5-D integrated systems using a passive interposer. High speed and low power operation is achieved through a new dynamic low swing tunable transmitter (DLST-TX) and inverter-based tunable receiver (INVT-RX) circuits. The novelty of the proposed solution lies in the digital trimming for PVT corners and random parameter variability allowing significant reduction of the voltage swing down to 120 mV with single ended signaling. The compensation method has negligible impact on the circuit performance and silicon area, not typically achievable by device geometry scaling. The proof-of-concept transceiver is implemented in a 65 nm CMOS technology and exhibits up to 4× higher energy efficiency at 1 Gb/s speed for 2.5 mm long chip-to-chip interconnect, as compared to state-of-the-art full swing communication schemes operating under the same conditions. The transceiver is suitable for parallel interfaces in 2.5-D integrated systems.
AB - This paper presents the design of a low swing transceiver for chip-to-chip communication in 2.5-D integrated systems using a passive interposer. High speed and low power operation is achieved through a new dynamic low swing tunable transmitter (DLST-TX) and inverter-based tunable receiver (INVT-RX) circuits. The novelty of the proposed solution lies in the digital trimming for PVT corners and random parameter variability allowing significant reduction of the voltage swing down to 120 mV with single ended signaling. The compensation method has negligible impact on the circuit performance and silicon area, not typically achievable by device geometry scaling. The proof-of-concept transceiver is implemented in a 65 nm CMOS technology and exhibits up to 4× higher energy efficiency at 1 Gb/s speed for 2.5 mm long chip-to-chip interconnect, as compared to state-of-the-art full swing communication schemes operating under the same conditions. The transceiver is suitable for parallel interfaces in 2.5-D integrated systems.
KW - 2.5-D integration
KW - I/O design
KW - Low swing
KW - digital trimming
KW - mismatch cancellation
KW - passive interposer
UR - http://www.scopus.com/inward/record.url?scp=85047911945&partnerID=8YFLogxK
U2 - 10.1109/ISQED.2018.8357298
DO - 10.1109/ISQED.2018.8357298
M3 - Conference contribution
SN - 9781538612149
T3 - Proceedings - International Symposium on Quality Electronic Design, ISQED
SP - 262
EP - 267
BT - 2018 19th International Symposium on Quality Electronic Design, ISQED 2018
ER -