Tunable spin-orbit coupling in two-dimensional InSeCitation formats

  • External authors:
  • Adrian Ceferino
  • Samuel Magorrian
  • V. Zolyomi
  • Denis Bandurin
  • Andre Geim
  • A. Patane
  • Z.D. Kovalyuk
  • Z.R. Kudrynskyi

Standard

Tunable spin-orbit coupling in two-dimensional InSe. / Ceferino, Adrian; Magorrian, Samuel; Zolyomi, V.; Bandurin, Denis; Geim, Andre; Patane, A.; Kovalyuk, Z.D.; Kudrynskyi, Z.R.; Grigorieva, Irina; Fal'ko, Vladimir.

In: Physical Review B, Vol. 104, 125432 , 22.09.2021.

Research output: Contribution to journalArticlepeer-review

Harvard

Ceferino, A, Magorrian, S, Zolyomi, V, Bandurin, D, Geim, A, Patane, A, Kovalyuk, ZD, Kudrynskyi, ZR, Grigorieva, I & Fal'ko, V 2021, 'Tunable spin-orbit coupling in two-dimensional InSe', Physical Review B, vol. 104, 125432 . https://doi.org/10.1103/PhysRevB.104.125432

APA

Ceferino, A., Magorrian, S., Zolyomi, V., Bandurin, D., Geim, A., Patane, A., Kovalyuk, Z. D., Kudrynskyi, Z. R., Grigorieva, I., & Fal'ko, V. (2021). Tunable spin-orbit coupling in two-dimensional InSe. Physical Review B, 104, [125432 ]. https://doi.org/10.1103/PhysRevB.104.125432

Vancouver

Ceferino A, Magorrian S, Zolyomi V, Bandurin D, Geim A, Patane A et al. Tunable spin-orbit coupling in two-dimensional InSe. Physical Review B. 2021 Sep 22;104. 125432 . https://doi.org/10.1103/PhysRevB.104.125432

Author

Ceferino, Adrian ; Magorrian, Samuel ; Zolyomi, V. ; Bandurin, Denis ; Geim, Andre ; Patane, A. ; Kovalyuk, Z.D. ; Kudrynskyi, Z.R. ; Grigorieva, Irina ; Fal'ko, Vladimir. / Tunable spin-orbit coupling in two-dimensional InSe. In: Physical Review B. 2021 ; Vol. 104.

Bibtex

@article{02677ccc0c8a4912af4c63158e6d01b6,
title = "Tunable spin-orbit coupling in two-dimensional InSe",
abstract = "We demonstrate that spin-orbit coupling (SOC) strength for electrons near the conduction band edge in few-layer γ-InSe films can be tuned over a wide range. This tunability is the result of a competition between film-thickness-dependent intrinsic and electric-field-induced SOC, potentially, allowing for electrically switchable spintronic devices. Using a hybrid k⋅p tight-binding model, fully parametrized with the help of density functional theory computations, we quantify SOC strength for various geometries of InSe-based field-effect transistors. The theoretically computed SOC strengths are compared with the results of weak antilocalization measurements on dual-gated multilayer InSe films, interpreted in terms of Dyakonov-Perel spin relaxation due to SOC, showing a good agreement between theory and experiment.",
author = "Adrian Ceferino and Samuel Magorrian and V. Zolyomi and Denis Bandurin and Andre Geim and A. Patane and Z.D. Kovalyuk and Z.R. Kudrynskyi and Irina Grigorieva and Vladimir Fal'ko",
year = "2021",
month = sep,
day = "22",
doi = "10.1103/PhysRevB.104.125432",
language = "English",
volume = "104",
journal = "Physical Review B",
issn = "2469-9969",
publisher = "American Physical Society",

}

RIS

TY - JOUR

T1 - Tunable spin-orbit coupling in two-dimensional InSe

AU - Ceferino, Adrian

AU - Magorrian, Samuel

AU - Zolyomi, V.

AU - Bandurin, Denis

AU - Geim, Andre

AU - Patane, A.

AU - Kovalyuk, Z.D.

AU - Kudrynskyi, Z.R.

AU - Grigorieva, Irina

AU - Fal'ko, Vladimir

PY - 2021/9/22

Y1 - 2021/9/22

N2 - We demonstrate that spin-orbit coupling (SOC) strength for electrons near the conduction band edge in few-layer γ-InSe films can be tuned over a wide range. This tunability is the result of a competition between film-thickness-dependent intrinsic and electric-field-induced SOC, potentially, allowing for electrically switchable spintronic devices. Using a hybrid k⋅p tight-binding model, fully parametrized with the help of density functional theory computations, we quantify SOC strength for various geometries of InSe-based field-effect transistors. The theoretically computed SOC strengths are compared with the results of weak antilocalization measurements on dual-gated multilayer InSe films, interpreted in terms of Dyakonov-Perel spin relaxation due to SOC, showing a good agreement between theory and experiment.

AB - We demonstrate that spin-orbit coupling (SOC) strength for electrons near the conduction band edge in few-layer γ-InSe films can be tuned over a wide range. This tunability is the result of a competition between film-thickness-dependent intrinsic and electric-field-induced SOC, potentially, allowing for electrically switchable spintronic devices. Using a hybrid k⋅p tight-binding model, fully parametrized with the help of density functional theory computations, we quantify SOC strength for various geometries of InSe-based field-effect transistors. The theoretically computed SOC strengths are compared with the results of weak antilocalization measurements on dual-gated multilayer InSe films, interpreted in terms of Dyakonov-Perel spin relaxation due to SOC, showing a good agreement between theory and experiment.

U2 - 10.1103/PhysRevB.104.125432

DO - 10.1103/PhysRevB.104.125432

M3 - Article

VL - 104

JO - Physical Review B

JF - Physical Review B

SN - 2469-9969

M1 - 125432

ER -