Tunable spin-orbit coupling in two-dimensional InSe

Research output: Contribution to journalArticlepeer-review

  • External authors:
  • Adrian Ceferino
  • Samuel Magorrian
  • V. Zolyomi
  • Denis Bandurin
  • Andre Geim
  • A. Patane
  • Z.D. Kovalyuk
  • Z.R. Kudrynskyi

Abstract

We demonstrate that spin-orbit coupling (SOC) strength for electrons near the conduction band edge in few-layer γ-InSe films can be tuned over a wide range. This tunability is the result of a competition between film-thickness-dependent intrinsic and electric-field-induced SOC, potentially, allowing for electrically switchable spintronic devices. Using a hybrid k⋅p tight-binding model, fully parametrized with the help of density functional theory computations, we quantify SOC strength for various geometries of InSe-based field-effect transistors. The theoretically computed SOC strengths are compared with the results of weak antilocalization measurements on dual-gated multilayer InSe films, interpreted in terms of Dyakonov-Perel spin relaxation due to SOC, showing a good agreement between theory and experiment.

Bibliographical metadata

Original languageEnglish
Article number125432
JournalPhysical Review B
Volume104
DOIs
Publication statusPublished - 22 Sep 2021