Stacking transition in rhombohedral graphite

Research output: Contribution to journalArticle

  • External authors:
  • Tataiana Latychevskaia
  • Seok-Kyun Son
  • Yaping Yang
  • Dale Chancellor
  • Michael Brown
  • Ivan Madan
  • Gabriele Berruto
  • Konstantin Novoselov

Abstract

Few-layer graphene (FLG) has recently been intensively investigated for its variable electronic properties, which are defined by a local atomic arrangement. While the most natural arrangement of layers in FLG is ABA (Bernal) stacking, a metastable ABC (rhombohedral) stacking, characterized by a relatively high-energy barrier, can also occur. When both types of stacking occur in one FLG device, the arrangement results in an in-plane heterostructure with a domain wall (DW). In this paper, we present two approaches to demonstrate that the ABC stacking in FLG can be controllably and locally turned into the ABA stacking. In the first approach, we introduced Joule heating, and the transition was characterized by 2D peak Raman spectra at a submicron spatial resolution. The transition was initiated in a small region, and then the DW was controllably shifted until the entire device became ABA stacked. In the second approach, the transition was achieved by illuminating the ABC region with a train of 790-nm-wavelength laser pulses, and the transition was visualized by transmission electron microscopy in both diffraction and dark-field imaging modes. Further, using this approach, the DW was visualized at a nanoscale spatial resolution in the dark-field imaging mode

Bibliographical metadata

Original languageEnglish
JournalFrontiers of Physics
Volume14
Issue number1
Early online date24 Oct 2018
DOIs
Publication statusPublished - Feb 2019