In this work the palladium interaction with silicon carbide is investigated by means of complementary analytical techniques such as thermogravimetry (TG), differential scanning calorimetry (DSC), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). Thermoscans were carried out on pellets of palladium, Î±-SiC and Î²-SiC high purity powders in the temperature range comprised between 293 K and 1773 K, in order to study the effect of temperature on the palladium-silicon carbide reaction. Thermoscans of Î±-SiC pellets containing 5 at.%Pd show that during differential calorimetry scans three exothermic peaks occurred at 773 K, 1144 K and 1615 K, while thermoscans of Î²-SiC pellets containing 3 at.%Pd and 5 at.%Pd do not show peaks. For the pellet Î±-SiCâ€“5 at.%Pd XRD spectra reveal that the first peak is associated with the formation of Pd3Si and SiO2 phases, while the second peak and the third peak are correlated with the formation of Pd2Si phase and the active oxidation of silicon carbide respectively. Thermogravimetry scans show weight gain and weight loss peaks due to the SiO2 phase formation and the active oxidation. Additionally XPS fittings reveal the development of SiCxOy phase during the first exothermic peak up to the temperature of 873 K. The experimental data reveals that alpha silicon carbide is attacked by palladium at lower temperatures than beta silicon carbide and the reaction mechanism between silicon carbide and palladium is strongly affected by silicon carbide oxidation.