Miniaturized SIW Bandpass Filter Based on TSV Technology for THz ApplicationsCitation formats

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Miniaturized SIW Bandpass Filter Based on TSV Technology for THz Applications. / Wang, Fengjuan ; Pavlidis, Vasilis; Yu, Ningmei .

In: IEEE Transactions on Terahertz Science and Technology, 2020.

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Wang, Fengjuan ; Pavlidis, Vasilis ; Yu, Ningmei . / Miniaturized SIW Bandpass Filter Based on TSV Technology for THz Applications. In: IEEE Transactions on Terahertz Science and Technology. 2020.

Bibtex

@article{10593078c8374b83b6e0a8900343986b,
title = "Miniaturized SIW Bandpass Filter Based on TSV Technology for THz Applications",
abstract = "A miniaturized substrate integrated waveguide (SIW) bandpass filter with an area of 0.682×0.210 mm2 is proposed based on Through-Silicon Via (TSV) technology for terahertz (THz) applications. The design method of the THz cavity filter based on rectangular TSV is introduced and the filtering characteristics are investigated by the finite element method (FEM) and mode matching method (MMM). The rectangular TSV is substituted by cylindrical structures and the THz cavity filter is fabricated and measured in order to investigate the possibility of integration with typical 3D IC manufacturing processes. The cavity filter utilizing cylindrical TSV exhibits a bandwidth of 0.051 THz centered at 0.331 THz, an insertion loss of 1.5 dB, and a reflection of higher than 15 dB in the passband.",
author = "Fengjuan Wang and Vasilis Pavlidis and Ningmei Yu",
year = "2020",
doi = "10.1109/TTHZ.2020.2974091",
language = "English",
journal = "IEEE Transactions on Terahertz Science and Technology",
issn = "2156-342X",
publisher = "IEEE",

}

RIS

TY - JOUR

T1 - Miniaturized SIW Bandpass Filter Based on TSV Technology for THz Applications

AU - Wang, Fengjuan

AU - Pavlidis, Vasilis

AU - Yu, Ningmei

PY - 2020

Y1 - 2020

N2 - A miniaturized substrate integrated waveguide (SIW) bandpass filter with an area of 0.682×0.210 mm2 is proposed based on Through-Silicon Via (TSV) technology for terahertz (THz) applications. The design method of the THz cavity filter based on rectangular TSV is introduced and the filtering characteristics are investigated by the finite element method (FEM) and mode matching method (MMM). The rectangular TSV is substituted by cylindrical structures and the THz cavity filter is fabricated and measured in order to investigate the possibility of integration with typical 3D IC manufacturing processes. The cavity filter utilizing cylindrical TSV exhibits a bandwidth of 0.051 THz centered at 0.331 THz, an insertion loss of 1.5 dB, and a reflection of higher than 15 dB in the passband.

AB - A miniaturized substrate integrated waveguide (SIW) bandpass filter with an area of 0.682×0.210 mm2 is proposed based on Through-Silicon Via (TSV) technology for terahertz (THz) applications. The design method of the THz cavity filter based on rectangular TSV is introduced and the filtering characteristics are investigated by the finite element method (FEM) and mode matching method (MMM). The rectangular TSV is substituted by cylindrical structures and the THz cavity filter is fabricated and measured in order to investigate the possibility of integration with typical 3D IC manufacturing processes. The cavity filter utilizing cylindrical TSV exhibits a bandwidth of 0.051 THz centered at 0.331 THz, an insertion loss of 1.5 dB, and a reflection of higher than 15 dB in the passband.

U2 - 10.1109/TTHZ.2020.2974091

DO - 10.1109/TTHZ.2020.2974091

M3 - Article

JO - IEEE Transactions on Terahertz Science and Technology

JF - IEEE Transactions on Terahertz Science and Technology

SN - 2156-342X

ER -