Laser-assisted ultrafast fabrication of crystalline Ta-doped TiO2 for high-humidity processed perovskite solar cellsCitation formats

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Laser-assisted ultrafast fabrication of crystalline Ta-doped TiO2 for high-humidity processed perovskite solar cells. / Mo, Hongbo; Wang, Dong; Chen, Qian et al.

In: ACS Applied Materials and Interfaces , 11.03.2022.

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@article{3088ce8e90ff4137aa7ea204cee11cbd,
title = "Laser-assisted ultrafast fabrication of crystalline Ta-doped TiO2 for high-humidity processed perovskite solar cells",
abstract = "Titanium dioxide (TiO2) compact film is a widely used electron transport layer (ETL) for n-ip planar perovskite solar cells (PSCs). However, TiO2 sufferers from poor electrical conductivity, leading to high energy loss at the perovskite/ETL/transparent conductive oxide interface. Doping TiO2 film with alkali and transition metal elements is an effective way to improve its electrical conductivity. The conventional method to prepare these metal-doped TiO2 films requires commonly time-consuming furnace treatments at 450-600 ℃ for 30 min to 3 h. Herein, a rapid one-step laser treatment is developed to enable doping of tantalum (Ta) in TiO2 (Ta-TiO2) and to simultaneously induce the crystallization of TiO2 films from its amorphous precursor to anatase phase. The PSCs based on the Ta-TiO2 films treated with the optimized fiber laser (1070 nm) processing parameters (21s with a peak processing temperature of 800–850 °C) show enhanced photovoltaic performance compared to that of the device fabricated using furnace-treated films at 500 °C for 30 min. The ambient-processed planar PSCs fabricated under high relative humidity (RH) of 50-70%, display the power conversion efficiencies (PCEs) of 18.34% and 16.04% for devices based on Cs0.1FA0.9PbI3 and CH3NH3PbI3 absorbers, respectively. These results are due to improved physical and chemical properties of the Ta-TiO2 films treated by the optimal laser process than the furnace process. The laser process is rapid, simple, and potentially scalable to produce metal-doped TiO2 films for efficient PSCs.",
author = "Hongbo Mo and Dong Wang and Qian Chen and Wei Guo and Suresh Maniyarasu and Andrew Thomas and Richard Curry and Lin Li and Zhu Liu",
year = "2022",
month = mar,
day = "11",
language = "English",
journal = "ACS Applied Materials and Interfaces ",
issn = "1944-8244",
publisher = "American Chemical Society",

}

RIS

TY - JOUR

T1 - Laser-assisted ultrafast fabrication of crystalline Ta-doped TiO2 for high-humidity processed perovskite solar cells

AU - Mo, Hongbo

AU - Wang, Dong

AU - Chen, Qian

AU - Guo, Wei

AU - Maniyarasu, Suresh

AU - Thomas, Andrew

AU - Curry, Richard

AU - Li, Lin

AU - Liu, Zhu

PY - 2022/3/11

Y1 - 2022/3/11

N2 - Titanium dioxide (TiO2) compact film is a widely used electron transport layer (ETL) for n-ip planar perovskite solar cells (PSCs). However, TiO2 sufferers from poor electrical conductivity, leading to high energy loss at the perovskite/ETL/transparent conductive oxide interface. Doping TiO2 film with alkali and transition metal elements is an effective way to improve its electrical conductivity. The conventional method to prepare these metal-doped TiO2 films requires commonly time-consuming furnace treatments at 450-600 ℃ for 30 min to 3 h. Herein, a rapid one-step laser treatment is developed to enable doping of tantalum (Ta) in TiO2 (Ta-TiO2) and to simultaneously induce the crystallization of TiO2 films from its amorphous precursor to anatase phase. The PSCs based on the Ta-TiO2 films treated with the optimized fiber laser (1070 nm) processing parameters (21s with a peak processing temperature of 800–850 °C) show enhanced photovoltaic performance compared to that of the device fabricated using furnace-treated films at 500 °C for 30 min. The ambient-processed planar PSCs fabricated under high relative humidity (RH) of 50-70%, display the power conversion efficiencies (PCEs) of 18.34% and 16.04% for devices based on Cs0.1FA0.9PbI3 and CH3NH3PbI3 absorbers, respectively. These results are due to improved physical and chemical properties of the Ta-TiO2 films treated by the optimal laser process than the furnace process. The laser process is rapid, simple, and potentially scalable to produce metal-doped TiO2 films for efficient PSCs.

AB - Titanium dioxide (TiO2) compact film is a widely used electron transport layer (ETL) for n-ip planar perovskite solar cells (PSCs). However, TiO2 sufferers from poor electrical conductivity, leading to high energy loss at the perovskite/ETL/transparent conductive oxide interface. Doping TiO2 film with alkali and transition metal elements is an effective way to improve its electrical conductivity. The conventional method to prepare these metal-doped TiO2 films requires commonly time-consuming furnace treatments at 450-600 ℃ for 30 min to 3 h. Herein, a rapid one-step laser treatment is developed to enable doping of tantalum (Ta) in TiO2 (Ta-TiO2) and to simultaneously induce the crystallization of TiO2 films from its amorphous precursor to anatase phase. The PSCs based on the Ta-TiO2 films treated with the optimized fiber laser (1070 nm) processing parameters (21s with a peak processing temperature of 800–850 °C) show enhanced photovoltaic performance compared to that of the device fabricated using furnace-treated films at 500 °C for 30 min. The ambient-processed planar PSCs fabricated under high relative humidity (RH) of 50-70%, display the power conversion efficiencies (PCEs) of 18.34% and 16.04% for devices based on Cs0.1FA0.9PbI3 and CH3NH3PbI3 absorbers, respectively. These results are due to improved physical and chemical properties of the Ta-TiO2 films treated by the optimal laser process than the furnace process. The laser process is rapid, simple, and potentially scalable to produce metal-doped TiO2 films for efficient PSCs.

M3 - Article

JO - ACS Applied Materials and Interfaces

JF - ACS Applied Materials and Interfaces

SN - 1944-8244

ER -