In situ TEM investigations of the microstructural changes and radiation tolerance in SiC nanowhiskers irradiated with He ions at high temperaturesCitation formats

  • Authors:
  • Emily Aradi
  • Jacob Lewis-Fell
  • Graeme Greaves
  • Steven E Donnelly
  • Jonathan A Hinks

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In situ TEM investigations of the microstructural changes and radiation tolerance in SiC nanowhiskers irradiated with He ions at high temperatures. / Aradi, Emily; Lewis-Fell, Jacob; Greaves, Graeme; Donnelly, Steven E; Hinks, Jonathan A.

In: Acta Materialia, Vol. 210, 116820, 15.05.2021.

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Aradi, Emily ; Lewis-Fell, Jacob ; Greaves, Graeme ; Donnelly, Steven E ; Hinks, Jonathan A. / In situ TEM investigations of the microstructural changes and radiation tolerance in SiC nanowhiskers irradiated with He ions at high temperatures. In: Acta Materialia. 2021 ; Vol. 210.

Bibtex

@article{beb4d011f9914c8292c43c45520ee705,
title = "In situ TEM investigations of the microstructural changes and radiation tolerance in SiC nanowhiskers irradiated with He ions at high temperatures",
abstract = "Using in-situ transmission electron microscopy (TEM) with ion irradiation, we investigated the microstructural changes in silicon carbide nanowhiskers (SiC NWs) which were used as a model system for nanoporous SiC. Irradiations were carried out using 6 keV He ions at temperatures between 500 and 1000°C and doses up to 20 dpa. These results are compared with the irradiation effects in SiC thin foils under the same conditions to establish differences in their response to radiation damage. The irradiation temperature played a significant role in the evolution of different microstructures; at 500°C, small defect clusters were observed in the NWs together with a segregation of carbon at the surface of the NWs mapped using energy-filtered TEM (EFTEM). At 800°C, small He bubbles (2–4 nm in diameter) were observed in the NW matrix while He platelets and bubble discs formed in the foils. At 1000°C, several changes were observed in the NWs including bubbles at twin boundaries, voids and oxygen-rich precipitates. The large surface area to volume ratio enhances defect recombination suppressing the defect density in the SiC NWs compared to the foils indicating high radiation tolerance; however, elemental segregation and precipitation may limit its application in advanced nuclear reactors.",
keywords = "Silicon carbide, nanowhiskers, nanoporous, ion irradiation, in-situ TEM, radiation damage, radiation tolerance",
author = "Emily Aradi and Jacob Lewis-Fell and Graeme Greaves and Donnelly, {Steven E} and Hinks, {Jonathan A}",
year = "2021",
month = may,
day = "15",
doi = "10.1016/j.actamat.2021.116820",
language = "English",
volume = "210",
journal = "Acta Materialia",
issn = "1359-6454",
publisher = "Elsevier BV",

}

RIS

TY - JOUR

T1 - In situ TEM investigations of the microstructural changes and radiation tolerance in SiC nanowhiskers irradiated with He ions at high temperatures

AU - Aradi, Emily

AU - Lewis-Fell, Jacob

AU - Greaves, Graeme

AU - Donnelly, Steven E

AU - Hinks, Jonathan A

PY - 2021/5/15

Y1 - 2021/5/15

N2 - Using in-situ transmission electron microscopy (TEM) with ion irradiation, we investigated the microstructural changes in silicon carbide nanowhiskers (SiC NWs) which were used as a model system for nanoporous SiC. Irradiations were carried out using 6 keV He ions at temperatures between 500 and 1000°C and doses up to 20 dpa. These results are compared with the irradiation effects in SiC thin foils under the same conditions to establish differences in their response to radiation damage. The irradiation temperature played a significant role in the evolution of different microstructures; at 500°C, small defect clusters were observed in the NWs together with a segregation of carbon at the surface of the NWs mapped using energy-filtered TEM (EFTEM). At 800°C, small He bubbles (2–4 nm in diameter) were observed in the NW matrix while He platelets and bubble discs formed in the foils. At 1000°C, several changes were observed in the NWs including bubbles at twin boundaries, voids and oxygen-rich precipitates. The large surface area to volume ratio enhances defect recombination suppressing the defect density in the SiC NWs compared to the foils indicating high radiation tolerance; however, elemental segregation and precipitation may limit its application in advanced nuclear reactors.

AB - Using in-situ transmission electron microscopy (TEM) with ion irradiation, we investigated the microstructural changes in silicon carbide nanowhiskers (SiC NWs) which were used as a model system for nanoporous SiC. Irradiations were carried out using 6 keV He ions at temperatures between 500 and 1000°C and doses up to 20 dpa. These results are compared with the irradiation effects in SiC thin foils under the same conditions to establish differences in their response to radiation damage. The irradiation temperature played a significant role in the evolution of different microstructures; at 500°C, small defect clusters were observed in the NWs together with a segregation of carbon at the surface of the NWs mapped using energy-filtered TEM (EFTEM). At 800°C, small He bubbles (2–4 nm in diameter) were observed in the NW matrix while He platelets and bubble discs formed in the foils. At 1000°C, several changes were observed in the NWs including bubbles at twin boundaries, voids and oxygen-rich precipitates. The large surface area to volume ratio enhances defect recombination suppressing the defect density in the SiC NWs compared to the foils indicating high radiation tolerance; however, elemental segregation and precipitation may limit its application in advanced nuclear reactors.

KW - Silicon carbide

KW - nanowhiskers

KW - nanoporous

KW - ion irradiation

KW - in-situ TEM

KW - radiation damage

KW - radiation tolerance

U2 - 10.1016/j.actamat.2021.116820

DO - 10.1016/j.actamat.2021.116820

M3 - Article

VL - 210

JO - Acta Materialia

JF - Acta Materialia

SN - 1359-6454

M1 - 116820

ER -