Improved performance of InSe field-effect transistors by channel encapsulation

Research output: Contribution to journalArticle

  • External authors:
  • Guangda Liang
  • Yiming Wang
  • Lin Han
  • Zai-Xing Yang
  • Qian Xin
  • Zakhar Kudrynskyi
  • Zakhar D Kovalyuk
  • Amalia Patane

Abstract

Due to the high electron mobility and photo-responsivity, InSe is considered as an excellent candidate for next generation electronics and optoelectronics. In particular, in contrast to many high-mobility two-dimensional (2D) materials, such as phosphorene, InSe is more resilient to oxidation in air. Nevertheless, its implementation in future applications requires encapsulation techniques to prevent the adsorption of gas molecules on its surface. In this work, we use a common lithography resist, poly(methyl methacrylate) (PMMA) to encapsulate InSe-based field-effect transistors (FETs). The encapsulation of InSe by PMMA improves the electrical stability of the FETs under a gate bias stress, and increases both the drain current and electron mobility. These findings indicate the effectiveness of the PMMA encapsulation method, which could be applied to other 2D materials.

Bibliographical metadata

Original languageEnglish
Article number06LT01
JournalSemiconductor Science and Technology
Volume33
Early online date13 Mar 2018
DOIs
StatePublished - 17 May 2018