High Electron Mobility and Insights into Temperature-Dependent Scattering Mechanisms in InAsSb Nanowires

Research output: Contribution to journalArticle

  • External authors:
  • Francesca Amaduzzi
  • Sabrina Sterzl
  • Heidi Potts
  • Laura M. Herz
  • Anna Fontcuberta i Morral
  • Michael B. Johnston

Abstract

InAsSb nanowires are promising elements for thermoelectric devices, infrared photodetectors, high-speed transistors, as well as thermophotovoltaic cells. By changing the Sb alloy fraction the mid-infrared bandgap energy and thermal conductivity may be tuned for specific device applications. Using both terahertz and Raman noncontact probes, we show that Sb alloying increases the electron mobility in the nanowires by over a factor of 3 from InAs to InAs0.65Sb0.35. We also extract the temperature-dependent electron mobility via both terahertz and Raman spectroscopy, and we report the highest electron mobilities for InAs0.65Sb0.35 nanowires to date, exceeding 16,000 cm2 V–1 s–1 at 10 K.

Bibliographical metadata

Original languageEnglish
Pages (from-to)3703-3710
JournalNano Letters
Volume18
Issue number6
Early online date2 May 2018
DOIs
Publication statusPublished - Jun 2018

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