Extended spectral range CMOS-compatible Graphene/Silicon-Hybrid-Photodetectors: Free-space light detection from the visible to short-wave infrared

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Detection of light in the near- and short-wave infrared spectral region is of great interest for applications ranging from imaging to sensing. However, silicon commonly employed for photodetectors is limited in its spectral range to wavelengths of 400... 1100nm due to its band gap of ∼1.1eV. Materials for light detection in the wavelength range >1100 nm are typically III-V-based semiconductors such as e.g. InGaAs which are difficult to integrate with CMOS technology, hindering use in main-stream applications due to technical issues and associated high cost. Here, we present graphene-silicon hybrid structure photodetectors which demonstrate an extended spectral detection range from ∼400... 1700nm.

Bibliographical metadata

Original languageEnglish
Title of host publicationEMAP 2018 - 2018 20th International Conference on Electronic Materials and Packaging
PublisherInstitute of Electrical and Electronics Engineers
ISBN (Electronic)9781538656426
DOIs
Publication statusPublished - 7 Mar 2019
Event20th International Conference on Electronic Materials and Packaging, EMAP 2018 - Clear Water Bay, Hong Kong
Event duration: 17 Dec 201820 Dec 2018

Conference

Conference20th International Conference on Electronic Materials and Packaging, EMAP 2018
CountryHong Kong
CityClear Water Bay
Period17/12/1820/12/18