Estimation of intrinsic and extrinsic capacitances of graphene self-switching diode using conformal mapping technique

Research output: Contribution to journalArticle

  • Authors:
  • Arun K. Singh
  • Gregory Auton
  • Ernest Hill
  • Aimin Song

Abstract

Due to a very high carrier concentration and low band gap, graphene based self-switching diodes do not demonstrate a very high rectification ratio. Despite that, it takes the advantage of graphene's high carrier mobility and has been shown to work at very high microwave frequencies. However, the AC component of these devices is hidden in the very linear current–voltage characteristics. Here, we extract and quantitatively study the device capacitance that determines the device nonlinearity by implementing a conformal mapping technique. The estimated value of the nonlinear component or curvature coefficient from DC results based on Shichman–Hodges model predicts the rectified output voltage, which is in good agreement with the experimental RF results.

Bibliographical metadata

Original languageEnglish
Article number035023
Journal2 D Materials
Volume5
Early online date30 Apr 2018
DOIs
StatePublished - 17 May 2018