Effects of substrate and anode metal annealing on InGaZnO Schottky diodes

Research output: Contribution to journalArticle

  • External authors:
  • Lulu Du
  • He Li
  • Linlong Yan
  • Qian Xin
  • Qingpu Wang

Abstract

By studying different annealing effects of substrate and anode metal, high-performance Schottky diodes based on InGaZnO (IGZO) film have been realized. It is observed that a suitable thermal annealing of the SiO2/Si substrate significantly improves the diode performance. On the contrary, annealing of the Pd anode increases surface roughness, leading to degradation in the diode performance. As such, by only annealing the substrate but not the anode, we are able to achieve an extremely high rectification ratio of 7.2 × 107, a large barrier height of 0.88 eV, and a near unity ideality factor of 1.09. The diodes exhibit the highest performance amongst IGZO-based Schottky diodes reported to date where IGZO layer is not annealed. The capacitance vs. voltage measurements indicate that the surface roughness is correlated with the trap state density at the Schottky interface.

Bibliographical metadata

Original languageEnglish
Article number011602
JournalApplied Physics Letters
Volume110
Early online date4 Jan 2017
DOIs
StatePublished - 6 Jan 2017