Dislocation core structures in (0001) InGaN

Research output: Research - peer-reviewArticle

  • External authors:
  • S. L. Rhode
  • M. K. Horton
  • S. L. Sahonta
  • M. J. Kappers
  • T. J. Pennycook
  • C. McAleese
  • C. J. Humphreys
  • R. O. Dusane
  • M. A. Moram


Threading dislocation core structures in c-plane GaN and InxGa1- xN (0.057 ≤ x ≤ 0.20) films were investigated by aberration-corrected scanning transmission electron microscopy. a-type dislocations are unaffected by alloying with indium and have a 5/7-atom ring core structure in both GaN and InxGa1- xN. In contrast, the dissociation lengths of (a + c)-type dislocations are reduced, and new 7/4/9-atom ring and 7/4/8/5-atom ring core structures were observed for the dissociated (a + c)-type dislocations in InxGa1- xN, which is associated with the segregation of indium near (a + c)-type and c-type dislocation cores in InxGa1- xN, consistent with predictions from atomistic Monte Carlo simulations.

Bibliographical metadata

Original languageEnglish
Article number105301
JournalJournal of Applied Physics
Issue number10
StatePublished - 14 Mar 2016