An Ultrafast Switchable Terahertz Polarization Modulator Based on III-V Semiconductor NanowiresCitation formats

  • External authors:
  • Sarwat A. Baig
  • Djamshid A. Damry
  • H. Hoe Tan
  • Chennupati Jagadish
  • Hannah J. Joyce
  • Michael B. Johnston

Standard

An Ultrafast Switchable Terahertz Polarization Modulator Based on III-V Semiconductor Nanowires. / Boland, Jessica L.; Baig, Sarwat A.; Damry, Djamshid A.; Tan, H. Hoe; Jagadish, Chennupati; Joyce, Hannah J.; Johnston, Michael B.

In: Nano Letters, Vol. 17, No. 4, 04.2017, p. 2603-2610.

Research output: Contribution to journalArticle

Harvard

Boland, JL, Baig, SA, Damry, DA, Tan, HH, Jagadish, C, Joyce, HJ & Johnston, MB 2017, 'An Ultrafast Switchable Terahertz Polarization Modulator Based on III-V Semiconductor Nanowires', Nano Letters, vol. 17, no. 4, pp. 2603-2610. https://doi.org/10.1021/acs.nanolett.7b00401

APA

Boland, J. L., Baig, S. A., Damry, D. A., Tan, H. H., Jagadish, C., Joyce, H. J., & Johnston, M. B. (2017). An Ultrafast Switchable Terahertz Polarization Modulator Based on III-V Semiconductor Nanowires. Nano Letters, 17(4), 2603-2610. https://doi.org/10.1021/acs.nanolett.7b00401

Vancouver

Boland JL, Baig SA, Damry DA, Tan HH, Jagadish C, Joyce HJ et al. An Ultrafast Switchable Terahertz Polarization Modulator Based on III-V Semiconductor Nanowires. Nano Letters. 2017 Apr;17(4):2603-2610. https://doi.org/10.1021/acs.nanolett.7b00401

Author

Boland, Jessica L. ; Baig, Sarwat A. ; Damry, Djamshid A. ; Tan, H. Hoe ; Jagadish, Chennupati ; Joyce, Hannah J. ; Johnston, Michael B. / An Ultrafast Switchable Terahertz Polarization Modulator Based on III-V Semiconductor Nanowires. In: Nano Letters. 2017 ; Vol. 17, No. 4. pp. 2603-2610.

Bibtex

@article{f66a48c414e24915bb36f27c3d680b0b,
title = "An Ultrafast Switchable Terahertz Polarization Modulator Based on III-V Semiconductor Nanowires",
abstract = "Progress in the terahertz (THz) region of the electromagnetic spectrum is undergoing major advances, with advanced THz sources and detectors being developed at a rapid pace. Yet, ultrafast THz communication is still to be realized, owing to the lack of practical and effective THz modulators. Here, we present a novel ultrafast active THz polarization modulator based on GaAs semiconductor nanowires arranged in a wire-grid configuration. We utilize an optical pump–terahertz probe spectroscopy system and vary the polarization of the optical pump beam to demonstrate ultrafast THz modulation with a switching time of less than 5 ps and a modulation depth of −8 dB. We achieve an extinction of over 13{\%} and a dynamic range of −9 dB, comparable to microsecond-switchable graphene- and metamaterial-based THz modulators, and surpassing the performance of optically switchable carbon nanotube THz polarizers. We show a broad bandwidth for THz modulation between 0.1 and 4 THz. Thus, this work presents the first THz modulator which combines not only a large modulation depth but also a broad bandwidth and picosecond time resolution for THz intensity and phase modulation, making it an ideal candidate for ultrafast THz communication.",
keywords = "Terahertz (THz), GaAs, nanowire, parylene, polarizer, modulator",
author = "Boland, {Jessica L.} and Baig, {Sarwat A.} and Damry, {Djamshid A.} and Tan, {H. Hoe} and Chennupati Jagadish and Joyce, {Hannah J.} and Johnston, {Michael B.}",
year = "2017",
month = "4",
doi = "10.1021/acs.nanolett.7b00401",
language = "English",
volume = "17",
pages = "2603--2610",
journal = "Nano Letters",
issn = "1530-6984",
publisher = "American Chemical Society",
number = "4",

}

RIS

TY - JOUR

T1 - An Ultrafast Switchable Terahertz Polarization Modulator Based on III-V Semiconductor Nanowires

AU - Boland, Jessica L.

AU - Baig, Sarwat A.

AU - Damry, Djamshid A.

AU - Tan, H. Hoe

AU - Jagadish, Chennupati

AU - Joyce, Hannah J.

AU - Johnston, Michael B.

PY - 2017/4

Y1 - 2017/4

N2 - Progress in the terahertz (THz) region of the electromagnetic spectrum is undergoing major advances, with advanced THz sources and detectors being developed at a rapid pace. Yet, ultrafast THz communication is still to be realized, owing to the lack of practical and effective THz modulators. Here, we present a novel ultrafast active THz polarization modulator based on GaAs semiconductor nanowires arranged in a wire-grid configuration. We utilize an optical pump–terahertz probe spectroscopy system and vary the polarization of the optical pump beam to demonstrate ultrafast THz modulation with a switching time of less than 5 ps and a modulation depth of −8 dB. We achieve an extinction of over 13% and a dynamic range of −9 dB, comparable to microsecond-switchable graphene- and metamaterial-based THz modulators, and surpassing the performance of optically switchable carbon nanotube THz polarizers. We show a broad bandwidth for THz modulation between 0.1 and 4 THz. Thus, this work presents the first THz modulator which combines not only a large modulation depth but also a broad bandwidth and picosecond time resolution for THz intensity and phase modulation, making it an ideal candidate for ultrafast THz communication.

AB - Progress in the terahertz (THz) region of the electromagnetic spectrum is undergoing major advances, with advanced THz sources and detectors being developed at a rapid pace. Yet, ultrafast THz communication is still to be realized, owing to the lack of practical and effective THz modulators. Here, we present a novel ultrafast active THz polarization modulator based on GaAs semiconductor nanowires arranged in a wire-grid configuration. We utilize an optical pump–terahertz probe spectroscopy system and vary the polarization of the optical pump beam to demonstrate ultrafast THz modulation with a switching time of less than 5 ps and a modulation depth of −8 dB. We achieve an extinction of over 13% and a dynamic range of −9 dB, comparable to microsecond-switchable graphene- and metamaterial-based THz modulators, and surpassing the performance of optically switchable carbon nanotube THz polarizers. We show a broad bandwidth for THz modulation between 0.1 and 4 THz. Thus, this work presents the first THz modulator which combines not only a large modulation depth but also a broad bandwidth and picosecond time resolution for THz intensity and phase modulation, making it an ideal candidate for ultrafast THz communication.

KW - Terahertz (THz)

KW - GaAs

KW - nanowire

KW - parylene

KW - polarizer

KW - modulator

U2 - 10.1021/acs.nanolett.7b00401

DO - 10.1021/acs.nanolett.7b00401

M3 - Article

VL - 17

SP - 2603

EP - 2610

JO - Nano Letters

JF - Nano Letters

SN - 1530-6984

IS - 4

ER -