Active terahertz metamaterials electrically modulated by InGaZnO Schottky diodesCitation formats

  • External authors:
  • Haotian Ling
  • Pengfei Qian
  • Baoqing Zhang
  • Mingming Feng
  • Yiming Wang
  • Xijian Zhang
  • Qingpu Wang
  • Yifei Zhang

Standard

Active terahertz metamaterials electrically modulated by InGaZnO Schottky diodes. / Ling, Haotian; Qian, Pengfei; Zhang, Baoqing; Feng, Mingming; Wang, Yiming; Zhang, Xijian; Wang, Qingpu; Zhang, Yifei; Song, Aimin.

In: Optical Materials Express, Vol. 11, No. 9, 01.09.2021, p. 2966-2974.

Research output: Contribution to journalArticlepeer-review

Harvard

Ling, H, Qian, P, Zhang, B, Feng, M, Wang, Y, Zhang, X, Wang, Q, Zhang, Y & Song, A 2021, 'Active terahertz metamaterials electrically modulated by InGaZnO Schottky diodes', Optical Materials Express, vol. 11, no. 9, pp. 2966-2974. https://doi.org/10.1364/OME.435575

APA

Ling, H., Qian, P., Zhang, B., Feng, M., Wang, Y., Zhang, X., Wang, Q., Zhang, Y., & Song, A. (2021). Active terahertz metamaterials electrically modulated by InGaZnO Schottky diodes. Optical Materials Express, 11(9), 2966-2974. https://doi.org/10.1364/OME.435575

Vancouver

Ling H, Qian P, Zhang B, Feng M, Wang Y, Zhang X et al. Active terahertz metamaterials electrically modulated by InGaZnO Schottky diodes. Optical Materials Express. 2021 Sep 1;11(9):2966-2974. https://doi.org/10.1364/OME.435575

Author

Ling, Haotian ; Qian, Pengfei ; Zhang, Baoqing ; Feng, Mingming ; Wang, Yiming ; Zhang, Xijian ; Wang, Qingpu ; Zhang, Yifei ; Song, Aimin. / Active terahertz metamaterials electrically modulated by InGaZnO Schottky diodes. In: Optical Materials Express. 2021 ; Vol. 11, No. 9. pp. 2966-2974.

Bibtex

@article{9fcf2a3eecf94bffa93fed51a5372899,
title = "Active terahertz metamaterials electrically modulated by InGaZnO Schottky diodes",
abstract = "Active metamaterials (MTMs) are artificially engineered structures with tunable and exceptional properties that are absent in natural materials. Recently, InGaZnO (IGZO), a widely used semiconductor for large-area and flexible display backplane drivers, has gained interest for active control of MTMs due to its large-area uniformity, ease of thin film deposition, and low cost. In this paper, IGZO Schottky barrier diodes (SBDs) are proposed to reconfigure electric-field-coupled inductor-capacitor (ELC) MTMs and actively control terahertz (THz) waves for the first time. The SBDs are designed to bridge the capacitors of the ELC resonators so that the average conductivity within the capacitor gap can be modulated by bias voltage while keeping the capacitance value almost unchanged. To precisely simulate this mechanism, two U-shaped resistive sheet models beside the gap are built for IGZO SBD in 3-D simulation for maintaining the same capacitance and resonant frequency. Furthermore, a device with 14400 MTM cells is fabricated and characterized using frequency-domain spectroscopy. The measured transmission shows a continuous modulation from -14.2 to -9.4 dB at 0.39 THz, which corresponds to a modulation depth of 14.3%. This work paves a new way for active THz MTMs using industrial compatible thin-film technology.",
author = "Haotian Ling and Pengfei Qian and Baoqing Zhang and Mingming Feng and Yiming Wang and Xijian Zhang and Qingpu Wang and Yifei Zhang and Aimin Song",
year = "2021",
month = sep,
day = "1",
doi = "10.1364/OME.435575",
language = "English",
volume = "11",
pages = "2966--2974",
journal = "Optical Materials Express",
issn = "2159-3930",
publisher = "Optical Society of America",
number = "9",

}

RIS

TY - JOUR

T1 - Active terahertz metamaterials electrically modulated by InGaZnO Schottky diodes

AU - Ling, Haotian

AU - Qian, Pengfei

AU - Zhang, Baoqing

AU - Feng, Mingming

AU - Wang, Yiming

AU - Zhang, Xijian

AU - Wang, Qingpu

AU - Zhang, Yifei

AU - Song, Aimin

PY - 2021/9/1

Y1 - 2021/9/1

N2 - Active metamaterials (MTMs) are artificially engineered structures with tunable and exceptional properties that are absent in natural materials. Recently, InGaZnO (IGZO), a widely used semiconductor for large-area and flexible display backplane drivers, has gained interest for active control of MTMs due to its large-area uniformity, ease of thin film deposition, and low cost. In this paper, IGZO Schottky barrier diodes (SBDs) are proposed to reconfigure electric-field-coupled inductor-capacitor (ELC) MTMs and actively control terahertz (THz) waves for the first time. The SBDs are designed to bridge the capacitors of the ELC resonators so that the average conductivity within the capacitor gap can be modulated by bias voltage while keeping the capacitance value almost unchanged. To precisely simulate this mechanism, two U-shaped resistive sheet models beside the gap are built for IGZO SBD in 3-D simulation for maintaining the same capacitance and resonant frequency. Furthermore, a device with 14400 MTM cells is fabricated and characterized using frequency-domain spectroscopy. The measured transmission shows a continuous modulation from -14.2 to -9.4 dB at 0.39 THz, which corresponds to a modulation depth of 14.3%. This work paves a new way for active THz MTMs using industrial compatible thin-film technology.

AB - Active metamaterials (MTMs) are artificially engineered structures with tunable and exceptional properties that are absent in natural materials. Recently, InGaZnO (IGZO), a widely used semiconductor for large-area and flexible display backplane drivers, has gained interest for active control of MTMs due to its large-area uniformity, ease of thin film deposition, and low cost. In this paper, IGZO Schottky barrier diodes (SBDs) are proposed to reconfigure electric-field-coupled inductor-capacitor (ELC) MTMs and actively control terahertz (THz) waves for the first time. The SBDs are designed to bridge the capacitors of the ELC resonators so that the average conductivity within the capacitor gap can be modulated by bias voltage while keeping the capacitance value almost unchanged. To precisely simulate this mechanism, two U-shaped resistive sheet models beside the gap are built for IGZO SBD in 3-D simulation for maintaining the same capacitance and resonant frequency. Furthermore, a device with 14400 MTM cells is fabricated and characterized using frequency-domain spectroscopy. The measured transmission shows a continuous modulation from -14.2 to -9.4 dB at 0.39 THz, which corresponds to a modulation depth of 14.3%. This work paves a new way for active THz MTMs using industrial compatible thin-film technology.

U2 - 10.1364/OME.435575

DO - 10.1364/OME.435575

M3 - Article

VL - 11

SP - 2966

EP - 2974

JO - Optical Materials Express

JF - Optical Materials Express

SN - 2159-3930

IS - 9

ER -