A Single Source Precursor for Tungsten Dichalcogenide Thin Films: Mo1-xWxS2 (0 ≤ x ≤ 1) Alloys by Aerosol-Assisted Chemical Vapor Deposition (AACVD)Citation formats

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A Single Source Precursor for Tungsten Dichalcogenide Thin Films: Mo1-xWxS2 (0 ≤ x ≤ 1) Alloys by Aerosol-Assisted Chemical Vapor Deposition (AACVD). / Tedstone, Aleksander; Lewis, Edward; Savjani, Nicky; Zhong, Xiang Li; Haigh, Sarah; O'Brien, Paul; Lewis, David.

In: Chemistry of Materials, Vol. 29, No. 9, 09.05.2017, p. 3858-3862.

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@article{ec50666552c2425a90dbf8105398a5c1,
title = "A Single Source Precursor for Tungsten Dichalcogenide Thin Films: Mo1-xWxS2 (0 ≤ x ≤ 1) Alloys by Aerosol-Assisted Chemical Vapor Deposition (AACVD)",
abstract = "The coordination complex WS3L2 (where L = S2CN(CH2CH3)2 ) can be used to deposit tungsten disulfide (WS2) thin films by aerosol-assisted chemical vapour deposition (AACVD). When WS3L2 is used in conjunction with the previ-ously reported precursor, MoL4 which produces molybdenum disulfide (MoS2) by AACVD, alloyed thin films of the type Mo1-xWxS2 are produced. The W/Mo ratio can be controlled by chang-ing the relative concentrations of precursors in the carrier aerosol, allowing straightforward manipulation of the optical properties of the material and exquisite control of the final film composition.",
author = "Aleksander Tedstone and Edward Lewis and Nicky Savjani and Zhong, {Xiang Li} and Sarah Haigh and Paul O'Brien and David Lewis",
year = "2017",
month = may,
day = "9",
doi = "10.1021/acs.chemmater.6b05271",
language = "English",
volume = "29",
pages = "3858--3862",
journal = "Chemistry of Materials",
issn = "0897-4756",
publisher = "American Chemical Society",
number = "9",

}

RIS

TY - JOUR

T1 - A Single Source Precursor for Tungsten Dichalcogenide Thin Films: Mo1-xWxS2 (0 ≤ x ≤ 1) Alloys by Aerosol-Assisted Chemical Vapor Deposition (AACVD)

AU - Tedstone, Aleksander

AU - Lewis, Edward

AU - Savjani, Nicky

AU - Zhong, Xiang Li

AU - Haigh, Sarah

AU - O'Brien, Paul

AU - Lewis, David

PY - 2017/5/9

Y1 - 2017/5/9

N2 - The coordination complex WS3L2 (where L = S2CN(CH2CH3)2 ) can be used to deposit tungsten disulfide (WS2) thin films by aerosol-assisted chemical vapour deposition (AACVD). When WS3L2 is used in conjunction with the previ-ously reported precursor, MoL4 which produces molybdenum disulfide (MoS2) by AACVD, alloyed thin films of the type Mo1-xWxS2 are produced. The W/Mo ratio can be controlled by chang-ing the relative concentrations of precursors in the carrier aerosol, allowing straightforward manipulation of the optical properties of the material and exquisite control of the final film composition.

AB - The coordination complex WS3L2 (where L = S2CN(CH2CH3)2 ) can be used to deposit tungsten disulfide (WS2) thin films by aerosol-assisted chemical vapour deposition (AACVD). When WS3L2 is used in conjunction with the previ-ously reported precursor, MoL4 which produces molybdenum disulfide (MoS2) by AACVD, alloyed thin films of the type Mo1-xWxS2 are produced. The W/Mo ratio can be controlled by chang-ing the relative concentrations of precursors in the carrier aerosol, allowing straightforward manipulation of the optical properties of the material and exquisite control of the final film composition.

U2 - 10.1021/acs.chemmater.6b05271

DO - 10.1021/acs.chemmater.6b05271

M3 - Article

VL - 29

SP - 3858

EP - 3862

JO - Chemistry of Materials

JF - Chemistry of Materials

SN - 0897-4756

IS - 9

ER -