A Single Source Precursor for Tungsten Dichalcogenide Thin Films: Mo1-xWxS2 (0 ≤ x ≤ 1) Alloys by Aerosol-Assisted Chemical Vapor Deposition (AACVD)

Research output: Contribution to journalArticle

  • External authors:
  • Aleksander Tedstone
  • Edward Lewis
  • Nicky Savjani
  • Xiang Li Zhong
  • Paul O'Brien

Abstract

The coordination complex WS3L2 (where L = S2CN(CH2CH3)2 ) can be used to deposit tungsten disulfide (WS2) thin films by aerosol-assisted chemical vapour deposition (AACVD). When WS3L2 is used in conjunction with the previ-ously reported precursor, MoL4 which produces molybdenum disulfide (MoS2) by AACVD, alloyed thin films of the type Mo1-xWxS2 are produced. The W/Mo ratio can be controlled by chang-ing the relative concentrations of precursors in the carrier aerosol, allowing straightforward manipulation of the optical properties of the material and exquisite control of the final film composition.

Bibliographical metadata

Original languageEnglish
Pages (from-to)3858-3862
Number of pages5
JournalChemistry of Materials
Volume29
Issue number9
Early online date12 Apr 2017
DOIs
StatePublished - 9 May 2017