A Hybrid Planar-Doped Potential-Well Barrier Diode for Detector ApplicationsCitation formats

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A Hybrid Planar-Doped Potential-Well Barrier Diode for Detector Applications. / Akura, Mise; Dunn, Geoffrey; Missous, Mohamed.

In: IEEE Transactions on Electron Devices, 09.08.2017.

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Akura, Mise ; Dunn, Geoffrey ; Missous, Mohamed. / A Hybrid Planar-Doped Potential-Well Barrier Diode for Detector Applications. In: IEEE Transactions on Electron Devices. 2017.

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@article{5d3c0265e9544a01b17d72d5824b78aa,
title = "A Hybrid Planar-Doped Potential-Well Barrier Diode for Detector Applications",
abstract = "This paper presents the principle of design and experimental demonstration of a prototype novel planar-doped potential-well barrier (PWB) diode concept that exploits the characteristics of both the PWB and planar-doped barrier (PDB) diodes. The highly doped (Be) sheet charge and potential well are inserted asymmetrically at nearly the same position within an intrinsic region to form a barrier. The hybrid device is designed so that the $δ $-doping is used to achieve a desirable minimum barrier height, while the active nature of charge in the potential well is used to enhance the device reverse bias performance. The diode achieved an ideality factor of 1.36 and corresponding voltage responsivity of 10900 V/W at 10 GHz. Diodes of this kind demonstrates promising RF signal detection and can be used in heterodyne applications. An estimated curvature coefficient of 21.2 V⁻¹ at a bias of 0.72 V and cut-off frequency of 47.4 GHz were realized. Results of simulation and experiment have shown excellent agreement and an improved asymmetric behavior in the $I-V$ characteristics in comparison to an equivalent PDB diode.",
keywords = "Current density, Detectors, Doping, Drift-diffusion (DD), Electric potential, orthophosphoric-based etch, Performance evaluation, potential barriers, responsivity, Schottky diodes, zero-bias detection.",
author = "Mise Akura and Geoffrey Dunn and Mohamed Missous",
year = "2017",
month = aug,
day = "9",
doi = "10.1109/TED.2017.2733724",
language = "English",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "IEEE",

}

RIS

TY - JOUR

T1 - A Hybrid Planar-Doped Potential-Well Barrier Diode for Detector Applications

AU - Akura, Mise

AU - Dunn, Geoffrey

AU - Missous, Mohamed

PY - 2017/8/9

Y1 - 2017/8/9

N2 - This paper presents the principle of design and experimental demonstration of a prototype novel planar-doped potential-well barrier (PWB) diode concept that exploits the characteristics of both the PWB and planar-doped barrier (PDB) diodes. The highly doped (Be) sheet charge and potential well are inserted asymmetrically at nearly the same position within an intrinsic region to form a barrier. The hybrid device is designed so that the $δ $-doping is used to achieve a desirable minimum barrier height, while the active nature of charge in the potential well is used to enhance the device reverse bias performance. The diode achieved an ideality factor of 1.36 and corresponding voltage responsivity of 10900 V/W at 10 GHz. Diodes of this kind demonstrates promising RF signal detection and can be used in heterodyne applications. An estimated curvature coefficient of 21.2 V⁻¹ at a bias of 0.72 V and cut-off frequency of 47.4 GHz were realized. Results of simulation and experiment have shown excellent agreement and an improved asymmetric behavior in the $I-V$ characteristics in comparison to an equivalent PDB diode.

AB - This paper presents the principle of design and experimental demonstration of a prototype novel planar-doped potential-well barrier (PWB) diode concept that exploits the characteristics of both the PWB and planar-doped barrier (PDB) diodes. The highly doped (Be) sheet charge and potential well are inserted asymmetrically at nearly the same position within an intrinsic region to form a barrier. The hybrid device is designed so that the $δ $-doping is used to achieve a desirable minimum barrier height, while the active nature of charge in the potential well is used to enhance the device reverse bias performance. The diode achieved an ideality factor of 1.36 and corresponding voltage responsivity of 10900 V/W at 10 GHz. Diodes of this kind demonstrates promising RF signal detection and can be used in heterodyne applications. An estimated curvature coefficient of 21.2 V⁻¹ at a bias of 0.72 V and cut-off frequency of 47.4 GHz were realized. Results of simulation and experiment have shown excellent agreement and an improved asymmetric behavior in the $I-V$ characteristics in comparison to an equivalent PDB diode.

KW - Current density

KW - Detectors

KW - Doping

KW - Drift-diffusion (DD)

KW - Electric potential

KW - orthophosphoric-based etch

KW - Performance evaluation

KW - potential barriers

KW - responsivity

KW - Schottky diodes

KW - zero-bias detection.

UR - http://www.scopus.com/inward/record.url?scp=85028827353&partnerID=8YFLogxK

U2 - 10.1109/TED.2017.2733724

DO - 10.1109/TED.2017.2733724

M3 - Article

AN - SCOPUS:85028827353

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

ER -