Recombination from polar InGaN/GaN quantum well structures at high excitation carrier densities
Dataset
Bibliographical metadata
Description
Time-integrated and time-resolved photoluminescence spectra, and experimental and simulated photoluminescence time decays, at different excitated carrier densities in InGaN/GaN single quantum well structures.
| Date made available | 30 May 2018 |
|---|---|
| Publisher | Mendeley Data |