Optical properties of c-Plane InGaN/GaN single quantum wells as a function of total electric field strength

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Description

Conduction and valence band profiles calculated using Nextnano3 for InGaN/GaN single quantum well structures with Si-doped InGaN underlayers and different GaN cap layer thicknesses.

Photoluminescence spectra obtained at 10 K for those quantum well structures.
Date made available28 Nov 2018
PublisherMendeley Data